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Select item 64653561.

Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices

Stefano Brivio, Jacopo Frascaroli, Erika Covi, Sabina Spiga

Sci Rep. 2019; 9: 6310. Published online 2019 Apr 16. doi: 10.1038/s41598-019-41497-3

PMCID:: PMC6465356

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A Historical Twist on Long-Range Wireless: Building a 103 km Multi-Hop Network Replicating Claude Chappe’s Telegraph

Mina Rady, Jonathan Muñoz, Razanne Abu-Aisheh, Mališa Vučinić, José Astorga Tobar, Alfonso Cortes, Quentin Lampin, Dominique Barthel, Thomas Watteyne

Sensors (Basel) 2022 Oct; 22(19): 7586. Published online 2022 Oct 6. doi: 10.3390/s22197586

PMCID:: PMC9573271

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INDUSTRIAL RESEARCH AT THE EASTERN TELEGRAPH COMPANY, 1872-1929

Br J Hist Sci. Author manuscript; available in PMC 2015 May 12.

Published in final edited form as: Br J Hist Sci. 2014 Mar 1; 47(1): 119–146. doi: 10.1017/S0007087413000174

PMCID:: PMC4427866

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Deep neural network analysis models for complex random telegraph signals

Marcel Robitaille, HeeBong Yang, Lu Wang, Bowen Deng, Na Young Kim

Sci Rep. 2023; 13: 10403. Published online 2023 Jun 27. doi: 10.1038/s41598-023-37142-9

PMCID:: PMC10300117

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Select item 75607545.

Random-telegraph-noise-enabled true random number generator for hardware security

James Brown, Jian Fu Zhang, Bo Zhou, Mehzabeen Mehedi, Pedro Freitas, John Marsland, Zhigang Ji

Sci Rep. 2020; 10: 17210. Published online 2020 Oct 14. doi: 10.1038/s41598-020-74351-y

PMCID:: PMC7560754

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Random Telegraph Noise in 3D NAND Flash Memories

Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita, Christian Monzio Compagnoni

Micromachines (Basel) 2021 Jun; 12(6): 703. Published online 2021 Jun 16. doi: 10.3390/mi12060703

PMCID:: PMC8234306

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Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor

Calvin Yi-Ping Chao, Thomas Meng-Hsiu Wu, Shang-Fu Yeh, Chih-Lin Lee, Honyih Tu, Joey Chiao-Yi Huang, Chin-Hao Chang

Sensors (Basel) 2023 Sep; 23(18): 7959. Published online 2023 Sep 18. doi: 10.3390/s23187959

PMCID:: PMC10535337

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Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

F. Di Capua, M. Campajola, D. Fiore, L. Gasparini, E. Sarnelli, A. Aloisio

Sci Rep. 2021; 11: 8580. Published online 2021 Apr 21. doi: 10.1038/s41598-021-87962-w

PMCID:: PMC8060403

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The Crimean War as a technological enterprise

Yakup Bektas

Notes Rec R Soc Lond. 2017 Sep 20; 71(3): 233–262. Published online 2017 Feb 1. doi: 10.1098/rsnr.2016.0007

PMCID:: PMC5554787

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Random telegraph noise from resonant tunnelling at low temperatures

Zuo Li, Moïse Sotto, Fayong Liu, Muhammad Khaled Husain, Hiroyuki Yoshimoto, Yoshitaka Sasago, Digh Hisamoto, Isao Tomita, Yoshishige Tsuchiya, Shinichi Saito

Sci Rep. 2018; 8: 250. Published online 2018 Jan 10. doi: 10.1038/s41598-017-18579-1

PMCID:: PMC5762822

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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

Yue Ma, Jinshun Bi, Hanbin Wang, Linjie Fan, Biyao Zhao, Lizhi Shen, Mengxin Liu

Nanomaterials (Basel) 2022 Dec; 12(23): 4344. Published online 2022 Dec 6. doi: 10.3390/nano12234344

PMCID:: PMC9741056

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Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

Calvin Yi-Ping Chao, Honyih Tu, Thomas Meng-Hsiu Wu, Kuo-Yu Chou, Shang-Fu Yeh, Chin Yin, Chih-Lin Lee

Sensors (Basel) 2017 Dec; 17(12): 2704. Published online 2017 Nov 23. doi: 10.3390/s17122704

PMCID:: PMC5751670

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Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Calvin Yi-Ping Chao, Shang-Fu Yeh, Meng-Hsu Wu, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon

Sensors (Basel) 2019 Dec; 19(24): 5447. Published online 2019 Dec 10. doi: 10.3390/s19245447

PMCID:: PMC6960882

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Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor

Haruki Ishida, Keiichiro Kagawa, Takashi Komuro, Bo Zhang, Min-Woong Seo, Taishi Takasawa, Keita Yasutomi, Shoji Kawahito

Sensors (Basel) 2018 Apr; 18(4): 977. Published online 2018 Mar 26. doi: 10.3390/s18040977

PMCID:: PMC5948865

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La place du clou Telegraph court dans le traitement des fractures de l'extrémité supérieure de l'humérus: à propos de 19 cas

Mohamed Amine karabila, Ismail Hmouri, Younes Mhamdi, Mohamed Azouz, Tarik Madani, Mohamed Kharmaz, Mohamed Ouadaghiri, Moulay Omar Lamrani, Ahmed Bardouni, Abdou Lahlou, Mustapha Mahfoud, Mohamed Saleh Berrada, Éric Montbarbon, Emmanuel Beaudouin

Pan Afr Med J. 2016; 24: 36. French. Publication en ligne 2016 mai 10. DOI : 10.11604/pamj.2016.24.36.8709

PMCID:: PMC4992369

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Select item 531985016.

Complementary-Metal-Oxide-Semiconductor-Integrated Carbon Nanotube Arrays: Towards Wide-Bandwidth Single-Molecule Sensing Systems

Steven B. Warren, Sefi Vernick, Ethan Romano, Kenneth L. Shepard

Nano Lett. Author manuscript; available in PMC 2017 Feb 21.

Published in final edited form as: Nano Lett. 2016 Apr 13; 16(4): 2674–2679. Published online 2016 Mar 24. doi: 10.1021/acs.nanolett.6b00319

PMCID:: PMC5319850

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Personal protective equipment for surgeons during COVID-19 pandemic: systematic review of availability, usage and rationing

Z M Jessop, T D Dobbs, S R Ali, E Combellack, R Clancy, N Ibrahim, T H Jovic, A J Kaur, A Nijran, T B O'Neill, I S Whitaker

Br J Surg. 2020 Sep; 107(10): 1262–1280. Published online 2020 Aug 24. doi: 10.1002/bjs.11750

PMCID:: PMC7273092

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Sense of Resistance for a Cursor Moved by User’s Keystrokes

Takahiro Kawabe, Yusuke Ujitoko, Takumi Yokosaka, Scinob Kuroki

Front Psychol. 2021; 12: 652781. Published online 2021 Apr 29. doi: 10.3389/fpsyg.2021.652781

PMCID:: PMC8116946

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Select item 702758819.

Extension distribution for DNA confined in a nanochannel near the Odijk regime

Hui-Min Chuang, Jeffrey G. Reifenberger, Aditya Bikram Bhandari, Kevin D. Dorfman

J Chem Phys. 2019 Sep 21; 151(11): 114903. Published online 2019 Sep 18. doi: 10.1063/1.5121305

PMCID:: PMC7027588

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Select item 1072560420.

Technology for dementia care: what would good technology look like and do, from carers’ perspectives?

Ruth Brookman, Simon Parker, Leonard Hoon, Asuka Ono, Atsushi Fukayama, Hisashi Matsukawa, Celia B. Harris

BMC Geriatr. 2023; 23: 867. Published online 2023 Dec 16. doi: 10.1186/s12877-023-04530-9

PMCID:: PMC10725604

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PMC Images search for telegraph device

Fig. 7Random telegraph noise in an aVMCO device.

Cumulative probability plots of RTN-induced relative current deviations for all eight resistance states of aVMCO RRAM device. Lognormal fits are shown for each resistance state.

Committee machines—a universal method to deal with non-idealities in memristor-based neural networks

Nat Commun. 2020;11:4273.
Fig. 5Random telegraph noise in a Ta2O5 device.

Cumulative probability plots of RTN-induced relative current deviations for all eight resistance states of a Ta₂O₅ RRAM device. Lognormal fits are shown for each resistance state.

Committee machines—a universal method to deal with non-idealities in memristor-based neural networks

Nat Commun. 2020;11:4273.
Figure 1

Evidence of Stimulated Telegraph Noise. (a) Current (green thick line, left axis) as a function of time in an experiment in which 100 pulses are delivered to the memristive device every 1 s. Pulses are 0.7 V high and 100 μs long and the current is acquired applying 0.1 V with a sampling time of 0.01 s. The applied voltage is reported as a grey thin line (right axis). Current jumps are ascribed to STN effect. (b) Current (green thick line, left axis) read at a constant voltage of 0.1 V (grey thin line, right axis) every 0.01 s with constant applied voltage and no pulses delivered to the device. Current jumps with small amplitude are ascribed to conventional electronic RTN.

Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices

Sci Rep. 2019;9:6310.
Figure 3

Random telegraph noise traces recorded on a device with . Two active defects with similar step heights are clearly visible. The arrows show steps and dwelling times linked to charge capture (c) and charge emission (e) events of the defects.

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors

Micromachines (Basel). 2020 Apr;11(4):446.